IRF540N TO-220 MOSFET Transistor N Channel

40.00 

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Description

  • This MOSFET includes very low on opposition per silicon zone, dynamic dv/dt rating, tough, quick exchanging and completely torrential slide evaluated subsequently, power MOSFET are surely understand to give incredibly productivity and unwavering quality which can be utilized in wide assortment of uses.
  • Transistor Polarity:N Channel
  • Consistent Drain Current Id:33A
  • Channel Source Voltage Vds:100V
  • On Resistance Rds(on):0.044ohm
  • Rds(on) Test Voltage Vgs:10V
  • Limit Voltage Vgs:4V
  • No. of Pins:3Pins
  • Working Temperature Max:175°C

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