Description
- This MOSFET includes very low on opposition per silicon zone, dynamic dv/dt rating, tough, quick exchanging and completely torrential slide evaluated subsequently, power MOSFET are surely understand to give incredibly productivity and unwavering quality which can be utilized in wide assortment of uses.
- Transistor Polarity:N Channel
- Consistent Drain Current Id:33A
- Channel Source Voltage Vds:100V
- On Resistance Rds(on):0.044ohm
- Rds(on) Test Voltage Vgs:10V
- Limit Voltage Vgs:4V
- No. of Pins:3Pins
- Working Temperature Max:175°C
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